Behavioral Modeling of Zinc-Oxide, Thin-Film, Field-Effect Transistors and the Design of Pixel Driver, Analog Amplifier, and Low-Noise RF Amplifier Circuits

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Calder, L. (2010). Behavioral Modeling of Zinc-Oxide, Thin-Film, Field-Effect Transistors and the Design of Pixel Driver, Analog Amplifier, and Low-Noise RF Amplifier Circuits. Unc Charlotte Electronic Theses And Dissertations.
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Abstract

Zinc-oxide (ZnO) is of great interest due to transparent properties, high breakdown voltages, and low cost. Behavioral modeling is presented in this dissertation to model ZnO thin-film field-effect transistor (FET) drain current versus gate-source overdrive voltage. Initial findings show that in "strong inversion," saturation, the drain current equation reveals a quartic-law dependency on gate-source overdrive voltage instead of square-law dependency seen in complementary metal-oxide semiconductor (CMOS) with no mobility reduction effects. This is postulated to result from the ZnO mobility showing a square-law increase with gate-source overdrive voltage. A "strong inversion," saturation model having ±1.6% deviation from measured data is created in verilog-A to simulate and design circuits. Circuits include a fabricated and measured pixel driver circuit sinking 28 μA of current while only having a gate area of 20 μm2. This ZnO thin-film FET pixel driver is believed to have the highest current density reported at the time of this writing. Also, the first known ZnO thin-film FET analog amplifier is analytically designed for a gain of 3 V/V at 10 kHz while drawing only 8 μA of supply current. Finally, the first known ZnO thin-film FET low-noise RF amplifier is designed, utilizing scattering parameters measured at the Air Force Research Laboratory on a device with minimum channel length of 1.25 μm. This amplifier has a small-signal gain of 12.6 dB at 13.56 MHz, and a current drain of 268.4 mA at a drain voltage of 13 V.

Details
Author

Calder, Leroy

Title

Behavioral Modeling of Zinc-Oxide, Thin-Film, Field-Effect Transistors and the Design of Pixel Driver, Analog Amplifier, and Low-Noise RF Amplifier Circuits

Physical Description

1 online resource (102 pages) : PDF

Date

2010

Degree Granting Institution

University of North Carolina at Charlotte

Abstract

Zinc-oxide (ZnO) is of great interest due to transparent properties, high breakdown voltages, and low cost. Behavioral modeling is presented in this dissertation to model ZnO thin-film field-effect transistor (FET) drain current versus gate-source overdrive voltage. Initial findings show that in "strong inversion," saturation, the drain current equation reveals a quartic-law dependency on gate-source overdrive voltage instead of square-law dependency seen in complementary metal-oxide semiconductor (CMOS) with no mobility reduction effects. This is postulated to result from the ZnO mobility showing a square-law increase with gate-source overdrive voltage. A "strong inversion," saturation model having ±1.6% deviation from measured data is created in verilog-A to simulate and design circuits. Circuits include a fabricated and measured pixel driver circuit sinking 28 μA of current while only having a gate area of 20 μm2. This ZnO thin-film FET pixel driver is believed to have the highest current density reported at the time of this writing. Also, the first known ZnO thin-film FET analog amplifier is analytically designed for a gain of 3 V/V at 10 kHz while drawing only 8 μA of supply current. Finally, the first known ZnO thin-film FET low-noise RF amplifier is designed, utilizing scattering parameters measured at the Air Force Research Laboratory on a device with minimum channel length of 1.25 μm. This amplifier has a small-signal gain of 12.6 dB at 13.56 MHz, and a current drain of 268.4 mA at a drain voltage of 13 V.

Genre

doctoral dissertations

Subjects--Topics

Electrical engineering

Degree

Ph.D.

Keywords

Amplifier
LNA
Model
Pixel
Zinc-Oxide
ZnO

Subject Area

Electrical Engineering

Advisor(s)

Binkley, David

Committee Members

Ravindran, Arun
Kakad, Yogendra
Weldon, Thomas
Raja, Yasin

Degree Note

Thesis (Ph.D.)--University of North Carolina at Charlotte, 2010.

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Rights Holder Information

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Identifier

Calder_uncc_0694D_10100

Permalink

http://hdl.handle.net/20.500.13093/etd:1002