The reliability of AlGaN/GaN high electron mobility transistors (HEMTs) is traditionally determined via thermal lifetime acceleration stress tests. More recently it has been proposed that electric field has a prominent role in limiting lifetimes. ...
There is a need for a foundation of a research study aimed at investigations on near real-time reliability awareness of Gallium Nitride devices in high-frequency power converters for which we need advanced hardware and algorithms. This dissertatio...
There is a need for a foundation of a research study aimed at investigations on near real-time reliability awareness of Gallium Nitride devices in high-frequency power converters for which we need advanced hardware and algorithms. This dissertatio...
Using the Transactional Model of Stress and Coping as a guiding theoretical framework, the current investigation followed the steps of instrument development outlined by Crocker and Algina (2008). The purpose of this study was to examine the facto...
