Search results
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Title
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Analysis of failure mechanisms that impact safe Operation of AlGaN/GaN HEMTs
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Author
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Hodge, Michael
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Date Created
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2014
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Description
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The reliability of AlGaN/GaN high electron mobility transistors (HEMTs) is traditionally determined via thermal lifetime acceleration stress tests. More recently it has been proposed that electric field has a prominent role in limiting lifetimes. ...
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Title
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Analysis of failure mechanisms that impact safe Operation of AlGaN/GaN HEMTs
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Author
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Hodge, Michael
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Date Created
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2014
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Subjects--Topical
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Electrical engineering
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Description
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The reliability of AlGaN/GaN high electron mobility transistors (HEMTs) is traditionally determined via thermal lifetime acceleration stress tests. More recently it has been proposed that electric field has a prominent role in limiting lifetimes. ...
