Search results | J. Murrey Atkins Library

Title: Exploring The Self Assembly of Cadmium Selenide Nanoparticles In Langmuir Films
Author: Giles, Alexander
Date Created: 2013
Description: The assembly of semiconductor nanocrystals into close packed films suitable for device engineering is critical to the development of next generation electronic and optoelectronic devices. These nanocrystals have nanometer dimensions and can be pre...

Title: Exploring The Self Assembly of Cadmium Selenide Nanoparticles In Langmuir Films
Author: Giles, Alexander
Date Created: 2013
Description: The assembly of semiconductor nanocrystals into close packed films suitable for device engineering is critical to the development of next generation electronic and optoelectronic devices. These nanocrystals have nanometer dimensions and can be pre...

Title: Exploring The Self Assembly of Cadmium Selenide Nanoparticles In Langmuir Films
Author: Giles, Alexander
Date Created: 2013
Subjects--Topical: Materials science, Nanoscience, Physics
Description: The assembly of semiconductor nanocrystals into close packed films suitable for device engineering is critical to the development of next generation electronic and optoelectronic devices. These nanocrystals have nanometer dimensions and can be pre...

Title: GROWTH OF InGaN MATERIAL AND DEVICE STRUCTURES IN A HIGH PRESSURE MOCVD REACTOR
Author: Conway, Matthew
Date Created: 2019
Description: This is an initial investigation of the super-atmospheric (1.5 – 2.5 bar(a)) Metal-Organic Chemical Vapor Deposition (MOCVD) growth of InGaN materials and experimental, device-like structures. The work was accomplished in a custom MOCVD reactor, s...

Title: GROWTH OF InGaN MATERIAL AND DEVICE STRUCTURES IN A HIGH PRESSURE MOCVD REACTOR
Author: Conway, Matthew
Date Created: 2019
Subjects--Topical: Materials science, Electrical engineering, Nanotechnology
Description: This is an initial investigation of the super-atmospheric (1.5 – 2.5 bar(a)) Metal-Organic Chemical Vapor Deposition (MOCVD) growth of InGaN materials and experimental, device-like structures. The work was accomplished in a custom MOCVD reactor, s...

Title: INGAN/GAN MULTIPLE QUANTUM WELL STRUCTURES: SUBMICRON STRUCTURAL, OPTICAL, ELECTRICAL AND CHEMICAL PROPERTIES
Author: Li, Ying
Date Created: 2013
Description: In this work, a novel approach has been implemented to investigate the submicron (30nm spatial resolution) structural and optical properties of bulk GaN, InGaN/GaN Multiple Quantum Well (MQW), p-typle AlGaN capped MQW, and full Light Emitting Diod...

Title: INGAN/GAN MULTIPLE QUANTUM WELL STRUCTURES: SUBMICRON STRUCTURAL, OPTICAL, ELECTRICAL AND CHEMICAL PROPERTIES
Author: Li, Ying
Date Created: 2013
Subjects--Topical: Materials science, Electrical engineering, Optics
Description: In this work, a novel approach has been implemented to investigate the submicron (30nm spatial resolution) structural and optical properties of bulk GaN, InGaN/GaN Multiple Quantum Well (MQW), p-typle AlGaN capped MQW, and full Light Emitting Diod...

Title: Infrared Photocurrent Spectroscopy Of Deep Levels In Mg-Doped GaN And AlxGa1-xN
Author: Batoni, Paolo
Date Created: 2009
Description: Recently, there is an increasing demand for III-nitride semiconductor based optoelectronic devices, and especially for ultraviolet (UV) and Deep UV sources and sensors; however, the development and the performance of such devices is fundamentally ...

Title: Infrared Photocurrent Spectroscopy Of Deep Levels In Mg-Doped GaN And AlxGa1-xN
Author: Batoni, Paolo
Date Created: 2009
Subjects--Topical: Electrical engineering
Description: Recently, there is an increasing demand for III-nitride semiconductor based optoelectronic devices, and especially for ultraviolet (UV) and Deep UV sources and sensors; however, the development and the performance of such devices is fundamentally ...